Gmetal and plastic; hermetically sealed; 10 amperes; 200 volts; 5 terminals; 1.250 in. Lg; 0.750 in. W; 0.460 in. H; m55 degrees c to p150 degrees c operating temp range; storage temp range: m55.0 to p150.0 degrees celsius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5996-01-410-8538
NSN 6110-00-791-3951
NSN 6620-01-290-8209
NSN 6610-01-436-2803
NSN 6135-01-522-9249
NSN 5855-01-602-9653
NSN 6130-01-504-1569
NSN 5910-01-347-3652
NSN 5855-01-567-3694
NSN 5920-00-010-0525
NSN 6220-00-221-5899
NSN 6610-00-146-3499