Gmetal and plastic; hermetically sealed; 10 amperes; 200 volts; 5 terminals; 1.250 in. Lg; 0.750 in. W; 0.460 in. H; m55 degrees c to p150 degrees c operating temp range; storage temp range: m55.0 to p150.0 degrees celsius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6135-00-269-5843
NSN 6105-00-873-3307
NSN 5930-00-009-8921
NSN 6130-00-677-8643
NSN 6135-00-180-5125
NSN 5950-01-481-2579
NSN 4140-00-458-3327
NSN 6135-01-615-0812
NSN 7035-01-119-6271
NSN 6150-01-434-4405
NSN 6145-01-602-9331
NSN 5999-00-079-0772