Gmetal and plastic; hermetically sealed; 10 amperes; 200 volts; 5 terminals; 1.250 in. Lg; 0.750 in. W; 0.460 in. H; m55 degrees c to p150 degrees c operating temp range; storage temp range: m55.0 to p150.0 degrees celsius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5990-01-234-0789
NSN 6145-00-862-7069
NSN 5950-01-435-6354
NSN 5950-01-556-7010
NSN 5965-01-633-1281
NSN 6220-01-209-0832
NSN 6240-01-259-0665
NSN 5996-00-264-8929
NSN 5920-01-630-5502
NSN 5925-01-525-6588
NSN 5999-01-303-8404
NSN 6135-01-290-6487