Gmetal and plastic; hermetically sealed; 10 amperes; 200 volts; 5 terminals; 1.250 in. Lg; 0.750 in. W; 0.460 in. H; m55 degrees c to p150 degrees c operating temp range; storage temp range: m55.0 to p150.0 degrees celsius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5835-00-770-2843
NSN 6145-00-444-9679
NSN 6105-00-121-1874
NSN 6610-01-574-3260
NSN 6130-01-389-9380
NSN 5895-01-571-1014
NSN 5990-01-571-7468
NSN 6685-01-094-2784
NSN 6240-00-275-1950
NSN 5960-01-121-4105
NSN 5996-01-456-0488
NSN 5915-00-202-5192