Gmetal and plastic; hermetically sealed; 10 amperes; 200 volts; 5 terminals; 1.250 in. Lg; 0.750 in. W; 0.460 in. H; m55 degrees c to p150 degrees c operating temp range; storage temp range: m55.0 to p150.0 degrees celsius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5895-01-214-4808
NSN 5965-01-015-5885
NSN 6610-00-679-4835
NSN 5999-00-350-6052
NSN 7035-01-145-5059
NSN 5855-01-197-2774
NSN 5975-01-062-1435
NSN 6145-01-140-1538
NSN 5925-00-173-3438
NSN 6650-01-452-8302
NSN 5996-01-006-6346
NSN 6610-01-435-8982