2 amp non-controlled avalanche voltage, 400v peak inverse and dc blocking voltage, 280v working voltage, full wave epoxy bridge rectifier, m50 to p150 degrees c operating and storage temp range, case 0.600 in. Lg; 0.600 in. W; 0.200 in. H; four wire lead terminals 1.000 in. Min lg spaced on 0.425 in. By 0.425 in. Mtg centers
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5935-00-312-0770
NSN 5910-01-574-3732
NSN 5920-01-098-6997
NSN 6110-01-449-9874
NSN 5920-00-261-9848
NSN 5965-01-321-7407
NSN 5920-01-154-6209
NSN 6685-01-207-3358
NSN 7035-00-092-4356
NSN 2925-01-444-2061
NSN 6320-01-054-3046
NSN 5960-01-499-3544