Gmetal and plastic; hermetically sealed; 10 amperes; 200 volts; 5 terminals; 1.250 in. Lg; 0.750 in. W; 0.460 in. H; m55 degrees c to p150 degrees c operating temp range; storage temp range: m55.0 to p150.0 degrees celsius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5895-00-935-8183
NSN 5945-01-643-5485
NSN 5935-01-025-5111
NSN 6150-00-933-4847
NSN 5965-00-905-6895
NSN 5915-00-168-4549
NSN 5975-01-040-7386
NSN 5950-01-266-0906
NSN 6135-01-247-5660
NSN 5915-01-633-9845
NSN 5975-00-711-1868
NSN 6150-00-983-7515