Gmetal and plastic; hermetically sealed; 10 amperes; 200 volts; 5 terminals; 1.250 in. Lg; 0.750 in. W; 0.460 in. H; m55 degrees c to p150 degrees c operating temp range; storage temp range: m55.0 to p150.0 degrees celsius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6645-00-394-8924
NSN 6135-01-100-3593
NSN 5985-01-233-0512
NSN 5975-00-774-0056
NSN 6150-01-322-7800
NSN 6220-00-471-4011
NSN 6150-01-233-9528
NSN 5920-01-200-6655
NSN 6130-00-071-5910
NSN 6145-01-191-8318
NSN 5996-00-431-6077
NSN 6320-01-143-3597