Gmetal and plastic; hermetically sealed; 10 amperes; 200 volts; 5 terminals; 1.250 in. Lg; 0.750 in. W; 0.460 in. H; m55 degrees c to p150 degrees c operating temp range; storage temp range: m55.0 to p150.0 degrees celsius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6150-01-301-3862
NSN 5965-00-131-6700
NSN 6650-01-444-2152
NSN 6320-00-186-6452
NSN 6130-01-154-4147
NSN 5960-00-222-7772
NSN 6320-00-343-1798
NSN 5905-01-392-0802
NSN 6105-01-389-8275
NSN 5985-01-231-9759
NSN 6685-00-492-9817
NSN 5915-01-605-3157