Silicon; 4 mtg holes 0.200 in. Dia; 2 8-32 in. Thd studs; 3 kv; 5.2 amperes; 11.250 in. Lg; 2.250 in. W; 3.000 in. H
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6610-01-445-6362
NSN 6645-01-505-5772
NSN 5999-01-215-1236
NSN 6135-00-756-6149
NSN 5950-00-231-9867
NSN 4140-00-810-1973
NSN 5996-00-248-7061
NSN 5950-01-422-4879
NSN 6220-01-239-3423
NSN 5920-01-309-6766
NSN 6650-00-680-9595
NSN 5965-01-260-2547