Silicon; 4 mtg holes 0.200 in. Dia; 2 8-32 in. Thd studs; 3 kv; 5.2 amperes; 11.250 in. Lg; 2.250 in. W; 3.000 in. H
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5925-01-604-9427
NSN 5960-01-317-3800
NSN 6145-01-506-6578
NSN 6610-01-322-7677
NSN 5930-00-330-3583
NSN 5835-00-198-4936
NSN 6610-00-025-1878
NSN 5930-01-207-0928
NSN 5835-00-351-9459
NSN 6320-00-358-1946
NSN 4140-00-824-6053
NSN 6135-01-278-9717