Silicon; 0.620 in. L; 0.420 in. W; 0.180 in. Thk; operating temp range m55 degrees c to p150 degrees c
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6685-01-376-8047
NSN 6685-01-600-4300
NSN 5905-01-236-3907
NSN 5895-00-268-7716
NSN 5915-00-156-2083
NSN 5915-01-388-5935
NSN 5910-01-560-4230
NSN 5965-01-548-7858
NSN 6620-01-158-9412
NSN 6320-01-622-5493
NSN 5930-01-064-0516
NSN 5905-01-352-5824