Silicon; 200 volts; 150 ampere; metal and plastic encased; 3 turret-type terminals; 2.250 in. Lg; 0.344 in. W; 1.000 in. H
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5960-01-262-1399
NSN 5910-01-141-6266
NSN 6650-01-453-1144
NSN 5920-01-584-4478
NSN 5985-01-173-5897
NSN 6645-00-892-1605
NSN 6650-01-349-6097
NSN 5975-01-153-1927
NSN 5985-01-112-3391
NSN 5835-01-491-4613
NSN 6150-00-757-1677
NSN 5935-00-403-5388